Ferroelectric Thin Films XII: Volume 784 (MRS Proceedings)

Ferroelectric Thin Films XII: Volume 784 (MRS Proceedings)


Yazar Susanne Hoffmann-Eifert Hiroshi Funakubo Vikram Joshi Angus I. Kingon Ivo P. Koutsaroff
Yayınevi Cambridge University Press
ISBN 9781558997226
Baskı yılı 2004
Sayfa sayısı 606
Ağırlık 0.97 kg
Stok durumu Var    Stok detayları
Kargoya teslim Aynı gün kargo

This book, first published in 2004, offers scientific and technological information on ferroelectric thin films from an international mix of academia, industry and government organizations. Presentations focus on the expanding scientific understanding of, and significant progress in, ferroelectric device technology, along with continuing developments in novel oxide materials. Advances presented on high-density ferroelectric nonvolatile memories (FeRAMs) include issues of materials integration, metal oxide electrodes utilization, the effect of stress on capacitors, and long-term reliability. Impressive developments in the integration of ferroelectric thin films on silicon are addressed in a joint section with Symposium E, Fundamentals of Novel Oxide/ Semiconductor Interfaces. Special emphasis is placed on heterostructures of silicon substrates and oxide thin films, and on the thermal stability of these interfaces. Topics include: fundamentals of ferroelectric thin films - emphasis on strain; fundamentals of ferroelectric thin films - emphasis on characterization and domains; oxide films processing; ferroelectric films; dielectric films applications; ferroelectric films for memories; gate dielectrics and functional oxides in silicon; and piezoelectric, optical and pyroelectric applications.
Stress evolution in integrated SrBi[subscript 2]Ta[subscript 2]O[subscript 3] ferroelectric layers by J. G. Lisoni and K. Wafer and J. A. Johnson and L. Goux and M. Schwitters and V. Paraschiv and D. Maes and L. Haspeslagh and C. Caputa and R. Zambrano and D. J. Wouters 3
Growth model of epitaxial Ph(Zr[subscript 0.52]Ti[subscript 0.48])O[subscript 3] nanoislands by Ming-Wen Chu and Izabela Szafraniak and Roland Scholz and Dietrich Hesse and Marin Alexe and Ulrich Gosele 9
Site controlled nucleation of ferroelectric crystals : a step towards lithography modulated self-assembly by P. Muralt and S. Buhlmann and S. Von Allmen 13
Preparation and characterization of ferroelectric Bi[subscript 3]TiNbO[subscript 9]-Bi[subscript 4]Ti[subscript 3]O[subscript 12] (m=2-3) thin films with different superlattice structures by Akira Shibuya and Minoru Noda and Masanon Okuyama 23
Residual stress effects in ferroelectric thin films by T. A. Berfield and N. R. Sottos and R. J. Ong and D. A. Payne 29
Low temperature dielectric properties of BST/ZrO[subscript 2] multilayer films by Santosh K. Sahoo and D. C. Agrawal and S. B. Majumder and R. S. Katiyar and Y. N. Mohapatra 35
Nanoelectromechanics of piezoresponse force microcopy : contact properties, fields below the surface and polarization switching by S. V. Kalinin and Junsoo Shin and M. Kachanov and E. Karapetian and A. P. Baddorf 43
A transmission electron microscopy study of dislocation substructures in PLD-grown epitaxial films of (Ba,Sr)TiO[subscript 3] on (001) LaAlO[subscript 3] by I. B. Misirlioglu and A. L. Vasiliev and M. Aindow and R. Ramesh and S. P. Alpay 49
Ferroelectric domain structure and local piezoelectric properties of sol-gel derived Pb(Zr[subscript 1-x] Ti[subscript x])O[subscript 3] films by I. K. Bdikin and V. V. Shvartsman and A. L. Kholkin and Seung-Hyun Kim 55
Interface states of laser ablated BaTiO[subscript 3] and Ba[subscript 0.9]Ca[subscript 0.1]TiO[subscript 3] thin films in MFS structure determined by DLTS and C-V technique by P. Victor and S. Saha and S. B. Krupanidhi 61
First-principles study of the electronic structure of Pb(ZrTiNb)O[subscript 3] (PZTN) systems by Hiromu Miyazawa and Takamitsu Higuchi and Taki Aoyama and Takeshi Kijima and Eiji Natori and Tatsuya Shimoda and Tamio Oguchi 67
Raman spectra of Sr[subscript m-3]Bi[subscript 4]Ti[subscript m]O[subscript 3m+3] thin films by Jia Wang and Guangxu Cheng and Shantao Zhang and Hongwei Cheng and Yanfeng Chen 73
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Axess
Axess

Taksit Taksit Tutarı Toplam Tutar
Tek çekim - 1436.72 TL
2 ay 743.50 TL 1487.01 TL
3 ay 505.25 TL 1515.74 TL
6 ay 269.39 TL 1616.31 TL
9 ay 191.56 TL 1724.07 TL
12 ay 155.05 TL 1860.55 TL

cardFinans
cardFinans

Taksit Taksit Tutarı Toplam Tutar
Tek çekim - 1436.72 TL
2 ay 743.50 TL 1487.01 TL
3 ay 505.25 TL 1515.74 TL
6 ay 269.39 TL 1616.31 TL
9 ay 191.56 TL 1724.07 TL
12 ay 155.05 TL 1860.55 TL

Bonus
Bonus

Taksit Taksit Tutarı Toplam Tutar
Tek çekim - 1436.72 TL
2 ay 743.50 TL 1487.01 TL
3 ay 505.25 TL 1515.74 TL
6 ay 269.39 TL 1616.31 TL
9 ay 191.56 TL 1724.07 TL
12 ay 155.05 TL 1860.55 TL

World
World

Taksit Taksit Tutarı Toplam Tutar
Tek çekim - 1436.72 TL
2 ay 743.50 TL 1487.01 TL
3 ay 505.25 TL 1515.74 TL
6 ay 269.39 TL 1616.31 TL
9 ay 191.56 TL 1724.07 TL
12 ay 155.05 TL 1860.55 TL

Maximum
Maximum

Taksit Taksit Tutarı Toplam Tutar
Tek çekim - 1436.72 TL
2 ay 743.50 TL 1487.01 TL
3 ay 505.25 TL 1515.74 TL
6 ay 269.39 TL 1616.31 TL
9 ay 191.56 TL 1724.07 TL
12 ay 155.05 TL 1860.55 TL

Paraf
Paraf

Taksit Taksit Tutarı Toplam Tutar
Tek çekim - 1436.72 TL
2 ay 743.50 TL 1487.01 TL
3 ay 505.25 TL 1515.74 TL
6 ay 269.39 TL 1616.31 TL
9 ay 191.56 TL 1724.07 TL
12 ay 155.05 TL 1860.55 TL

Kredi Kartı (Tek Çekim)
Kredi Kartı (Tek Çekim)

Taksit Taksit Tutar ı Toplam Tutar
Peşin - 1436.72 TL

Bonus, Maximum, Paraf, Cardfinans, Axess ve World özelliği olan tüm kartlar ile ödeme yapılabilir.